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參數(shù)資料
| 型號(hào)： | APT30M30JFLL |
| 英文描述： | Volts:300V RDS(ON)0.03Ohms ID(cont):88Amps|FREDFETs ( fast body diode) |
| 中文描述： | 電壓：300V的RDS（ON）0.03Ohms身份證（續(xù)）：八十八安培| FREDFETs（快速體二極管） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 53K |
| 代理商： | APT30M30JFLL |
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/μSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 8, Junction Capacitance vs Reverse Voltage
C
J
,
t
r
,
I
R
,
I
F
,
(
(
(
(
t
f
,
K
f
,
Q
r
,
(
(
(
V
f
,
(
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
0.01
0.05
0.1
0.5
1
5
10
50
100
200
APT30D120BCT
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
500
100
50
10
T
J
= 100°C
V
R
= 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
T
J
=100°C
V
R
=650V
T
J
=100°C
V
R
=650V
T
J
= 100°C
V
R
= 650V
I
F
= 30A
t
rr
I
RRM
Q
rr
T
J
= -55°C
T
J
= 100°C
T
J
= 150°C
15A
30A
60A
15A
30A
60A
60A
30A
15A
0
V
fr
t
fr
T
J
= 25°C
t
rr
Q
rr
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M30JLL | 功能描述:MOSFET N-CH 300V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M30JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT30M30LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT30M30LFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT30M30LLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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