參數(shù)資料
型號： APT30M19JVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。
文件頁數(shù)： 2/4頁
文件大?。?/td> 76K
代理商： APT30M19JVR
0
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μ
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 0.6
MIN
TYP
18000
3250
980
650
115
290
22
33
70
10
MAX
21600
4550
1470
975
175
435
44
66
135
20
UNIT
pF
nC
ns
MIN
TYP
MAX
130
520
1.3
5
300
525
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
200
250
1.5
4.4
15
25
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 426
μ
H, R
G
=
25
, Peak I
L
= 130A
5
I
S
≤
-I
D
[Cont.],
di
/
dt
= 100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150
°
C, R
G
= 2.0
,
V
R
= 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL/PACKAGE CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
V
Isolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°
C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
APT30M19JVFR
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