- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366567 > APT30M19JVFR (Advanced Power Technology Ltd.) Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | APT30M19JVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 76K |
| 代理商： | APT30M19JVFR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
0
APT30M19JVFR
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
1
5
10
50
100
300
.01
.1
1
10
50
0
200
400
600
800
1000 1200 1400
0
0.4
0.8
1.2
1.6
2.0
50,000
10,000
5,000
1,000
500
300
100
50
10
5
1
VDS=60V
VDS=240V
I
D
= 0.5 I
D
[Cont.]
10
μ
S
10mS
100mS
DC
1mS
TJ =+150
°
C
TJ =+25
°
C
Crss
Coss
Ciss
1,000
100
50
10
5
1
20
16
12
8
4
0
100
μ
S
VDS=150V
V
Isolation
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30M19JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M30LLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT30M30JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT30M30B2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT30M36JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M19JVR | 功能描述:MOSFET N-CH 300V 130A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M30B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT30M30B2FLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT30M30B2LL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT30M30B2LL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。