參數(shù)資料
型號(hào): APT30GP60LDL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): IGBT 晶體管
英文描述: 100 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝: ROHS COMPLIANT, TO-264, 3 PIN
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 199K
代理商: APT30GP60LDL
052-6355
Rev
A
7-2008
APT30GP60B2DL_LDL(G)
Figure 22, Turn-on Switching Waveforms and Denitions
10 %
5 %
10%
t
d(on)
t
r
90%
5 %
Gate Voltage
Collector Voltage
Collector Current
Switching Energy
T
J = 125 C
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125 C
Collector Current
Collector Voltage
Gate Voltage
90%
t
f
t
d(off)
0
10%
Switching Energy
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, E
ON1
Test Circuit
IC
A
D.U.T.
APT15DF60
VCE
Figure 21, Inductive Switching Test Circuit
VCC
APT30DL60
相關(guān)PDF資料
PDF描述
APT30GP60S 100 A, 600 V, N-CHANNEL IGBT
APT30GP60B 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GS60BRDL 54 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GT60KR 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30GT60KRG 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT30GP60LDLG 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264
APT30GS60BRDL 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GS60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT30GS60BRDQ2 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
APT30GS60BRDQ2G 功能描述:IGBT 600V 54A 250W SOT227 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件