- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48369 > APT30GP60JDQ1 (MICROSEMI POWER PRODUCTS GROUP) 67 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT30GP60JDQ1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 PIN |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 456K |
| 代理商： | APT30GP60JDQ1 |
050-7452
Rev
A
9-2005
APT30GP60JDQ1
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 118°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
3.2
2.1
APT30GP60JDQ1(G)
15
26
110
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
15
-
19
-
21
-
2
-
105
-
250
-
5
-
55
-
420
-
15
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 15A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.913 °C/W
0.573 °C/W
0.216 °C/W
0.00132 J/°C
0.0302 J/°C
0.512 J/°C
Power
(watts)
Junction
temp(°C)
RC MODEL
Case temperature(°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30M36B2LLG | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M36LLL | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M36LLLG | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M36B2LL | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M36B2LL | 84 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30GP60LDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GP60LDLG | 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264 |
| APT30GS60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GS60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT30GS60BRDQ2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。