參數(shù)資料
型號: APT30GN60K
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 63 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 0K
代理商: APT30GN60K
052-6296
Re
v
A
7-2008
APT30GN60K(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.3
Ω
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,
TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,
TURN
OFF
ENERGY
LOSS
(J)
t f,
F
ALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
T
J
= 25°C
, or =125°C
R
G
= 4.3
Ω
L = 100H
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
250
200
150
100
50
0
100
80
60
40
20
0
1600
1400
1200
1000
800
600
400
200
0
3000
2500
2000
1500
1000
500
0
V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
R
G
= 4.3
Ω, L = 100H, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
R
G
= 4.3
Ω, L = 100H, V
CE
= 400V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
60A
E
off,
60A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
60A
E
off,
60A
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
相關(guān)PDF資料
PDF描述
APT30GP60BDQ1G 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GP60BDQ1G 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GP60BDQ1 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GP60BDQ1 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT30GP60JDF1 67 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT30GN60KG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube
APT30GN60S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GN60SDQ2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GN60SDQ2G 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GN60SG 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT