- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36709 > APT25GN120BG 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT25GN120BG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMLPLIANT, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | APT25GN120BG |
050-7600
Rev
D
11-2005
APT25GN120B_S(G)
TYPICAL PERFORMANCE CURVES
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
V
CE = 960V
V
CE = 600V
V
CE = 240V
IC = 25A
TJ = 25°C
250s PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
75
60
45
30
15
0
4
3.5
3
2.5
2
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
0
90
80
70
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
11V
9V
8V
12V
10V
7V
15V
11V
10V
9V
12V
8V
7V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 50A
I
C = 25A
I
C = 12.5A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 50A
I
C = 25A
I
C = 12.5A
0
5
10
15
0
5
10
15
0
2
4
6
8
10
12
14
0
20 40 60 80 100 120 140 160 180
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120SG | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120S | 67 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT25GN120S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Utilizing the latest Field Stop and Trench Gate technologies |
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
| APT25GP120B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BD1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family |
| APT25GP120BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。