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參數(shù)資料
| 型號： | APT20N60SC3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 200K |
| 代理商： | APT20N60SC3 |
050-7145
Rev
D
4-2006
APT20N60B_SC3
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
TJ = 125 C
Gate Voltage
Collector Current
Collector Voltage
90%
10%
0
t
d(off)
t
f
Switching Energy
T
J = 125 C
Collector Current
Collector Voltage
Gate Voltage
10%
td(on)
5%
10%
5 %
tr
90%
Switching Energy
相關PDF資料 |
PDF描述 |
|---|---|
| APT20N60SC3G | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20N60BC3G | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BC3 | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BC3 | 20.7 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT20N60SC3G | 功能描述:MOSFET N-CH 600V 20.7A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT20N60SCF | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SCFG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD120BHB | 制造商:Microsemi Corporation 功能描述: |
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