- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36709 > APT20N60BCFG (MICROSEMI POWER PRODUCTS GROUP) 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT20N60BCFG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 190K |
| 代理商： | APT20N60BCFG |
050-7235
Rev
A
5-2005
Typical Performance Curves
APT20N60BCF(G)_SCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Figure 19, Turn-off Switching Waveforms and Denitions
Figure 18, Turn-on Switching Waveforms and Denitions
Drain Current
Drain Voltage
Gate Voltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
APT15DQ60
ID
VDS
D.U.T.
VDD
G
Figure 20, Inductive Switching Test Circuit
T
J125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
Drain Voltage
Gate Voltage
Drain Current
Switching Energy
TO-247 Package Outline
D
3PAK Package Outline
e3
e1 SAC: Tin, Silver, Copper
100% Sn
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
D
ra
in
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20N60BCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60BCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20N60SCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20N60SCF | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20N60SC3 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 20.7A 3-Pin(2+Tab) D3PAK |
| APT20N60SC3G | 功能描述:MOSFET N-CH 600V 20.7A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20N60SCF | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20N60SCFG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。