- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36708 > APT20M40BVR (MICROSEMI POWER PRODUCTS GROUP) 59 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PDF資料下載
參數(shù)資料
| 型號(hào)： | APT20M40BVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT20M40BVR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 1.6
MIN
TYP
MAX
4050
4860
980
1375
300
450
130
195
30
45
55
80
12
24
14
28
43
70
714
UNIT
pF
nC
ns
APT20M40BVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5620
Rev
A
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
59
236
1.3
280
3.5
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 0.75mH, RG = 25, Peak IL = 59A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20M45BNFR-BUTT | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M60BNFR-GULLWING | 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M60BNFR-BUTT | 50 A, 200 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M45BNFR-GULLWING | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M45BNR-BUTT | 58 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M40BVRG | 功能描述:MOSFET N-CH 200V 59A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20M40DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP |
| APT20M40HVR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 45A I(D) | TO-258 |
| APT20M40JN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 77A I(D) |
| APT20M42HVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。