參數(shù)資料
型號(hào)： APT20M38BVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁數(shù)： 2/4頁
文件大?。?/td> 76K
代理商： APT20M38BVR
DYNAMIC CHARACTERISTICS
APT20M38BVFR
0
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.4
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/
μ
s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μ
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.6
MIN
TYP
5100
1145
390
148
47
75
14
21
48
10
MAX
6120
1600
585
225
75
110
28
42
75
20
UNIT
pF
nC
ns
MIN
TYP
MAX
67
268
1.3
8
240
420
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
1
2
10
16
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25
°
C, L = 0.58mH, R
G
=
25
, Peak I
L
= 67A
5
I
S
≤
-I
D
[Cont.],
di
/
dt
= 100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150
°
C, R
G
= 2.0
,
V
R
= 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.34
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
相關(guān)PDF資料
PDF描述
APT20M38SVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M40BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M42HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M45BVFR Power MOS V is a new generation of high voltage N-Channel enhancement
APT20M45BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M38BVRG 功能描述:MOSFET N-CH 200V 67A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M38SVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38SVFRG 功能描述:MOSFET N-CH 200V 67A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M38SVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38SVRG 功能描述:MOSFET N-CH 200V 67A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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