- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36708 > APT20M36BLLG (MICROSEMI POWER PRODUCTS GROUP) 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT20M36BLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 168K |
| 代理商： | APT20M36BLLG |
050-7007
Rev
C
7-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D3PAK
BLL
SLL
APT20M36BLL
APT20M36SLL
200V 65A 0.036
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D3PAK Package
POWER MOS 7 R MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 32.5A)
Zero Gate Voltage Drain Current (V
DS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.036
100
500
±100
35
APT20M36BLL_SLL
200
65
260
±30
±40
329
2.63
-55 to 150
300
65
30
1300
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20M36BLL | 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20M38BVR | 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M38BVR | 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT20M38HLL | 60 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT20M38SVFR | 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M36SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT20M36SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT20M36SLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT20M36SLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube |
| APT20M38BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。