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參數(shù)資料
| 型號(hào)： | APT20M22JVRU3 |
| 元件分類： | JFETs |
| 英文描述： | 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 720K |
| 代理商： | APT20M22JVRU3 |
APT20M22JVRU3
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2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 48.5A
22
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
8500
Coss
Output Capacitance
1950
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
560
pF
Qg
Total gate Charge
290
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 97A @ TJ=25°C
120
nC
Td(on)
Turn-on Delay Time
16
Tr
Rise Time
25
Td(off)
Turn-off Delay Time
48
Tf
Fall Time
VGS = 15V
VBus = 100V
ID = 97A @ TJ=25°C
RG = 0.6
8
ns
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
VR = 200V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 200V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
94
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =200A/s
Tj = 25°C
21
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
3
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
6
A
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt =200A/s
Tj = 125°C
150
nC
trr
Reverse Recovery Time
31
ns
Qrr
Reverse Recovery Charge
335
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 133V
di/dt =1000A/s
Tj = 125°C
19
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M22LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT20M22LVFRG | 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20M22LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT20M22LVRG | 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20M25JNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 100A I(D) |
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