- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄36708 > APT20M22JVFR 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT20M22JVFR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 73K |
| 代理商： | APT20M22JVFR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT20M22JVFR
TC =+25°C
TJ =+150°C
SINGLE PULSE
500
100
50
10
5
1
20
16
12
8
4
0
050-5582
Rev
B
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
1
5
10
50
100
200
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
400
100
50
10
5
1
VDS=100V
VDS=40V
VDS=160V
I
D
= I
D
[Cont.]
10
S
1mS
10mS
100mS
DC
100
S
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20M22JVRU2 | 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M22JVRU3 | 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M22LVR | 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M22LVR | 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M34SLL | 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M22JVR | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT20M22JVRU2 | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT20M22JVRU3 | 功能描述:MOSFET N-CH 200V 97A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT20M22LVFR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT20M22LVFRG | 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。