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參數(shù)資料
| 型號(hào)： | APT20M20B2LL |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | APT20M20B2LL |
050-7013
Rev
D
4-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
DYNAMICCHARACTERISTICS
APT20M20B2LL_LLL
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID100A)
Reverse Recovery Time (I
S = -ID100A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID100A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 6
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
100
400
1.3
284
3.06
5
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 7
Turn-off Switching Energy
Turn-on Switching Energy 7
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 100V
I
D = 100A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 100V
I
D = 100A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 130V, VGS = 15V
I
D = 100A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 130V, VGS = 15V
I
D = 100A, RG = 5
MIN
TYP
MAX
6850
2180
95
110
43
47
13
40
26
2
465
455
920
915
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.50mH, RG = 25, Peak IL = 100A
5 The maximum current is limited by lead temperature
6 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID75A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20M20B2LL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT20M20B2LLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube |
| APT20M20JFLL | 功能描述:MOSFET N-CH 200V 104A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT20M20JFLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT20M20JLL | 功能描述:MOSFET N-CH 200V 104A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
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