參數(shù)資料
型號: APT20M18B2VFR
元件分類: JFETs
英文描述: 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 156K
代理商: APT20M18B2VFR
050-5906
Rev
A
5-2004
APT20M18B2VFR_LVFR
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100 200
0
10
20
30
40
50
0
100
200
300
400
500
0.3
0.5
0.7
0.9
1.1
1.3
1.5
400
100
50
10
5
1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
30,000
10,000
1,000
100
200
100
10
1
VDS=100V
VDS = 40V
VDS = 160V
I
D = 100A
相關(guān)PDF資料
PDF描述
APT20M22JVR 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M34SFLL 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M34BFLL 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M34BFLLG 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M34SFLLG 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M18B2VFR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
APT20M18B2VFRG 功能描述:MOSFET N-CH 200V 100A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M18B2VR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET
APT20M18B2VR_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET
APT20M18B2VRG 功能描述:MOSFET N-CH 200V 100A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件