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參數(shù)資料
| 型號(hào)： | APT20M16LLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 165K |
| 代理商： | APT20M16LLLG |
APT20M16 B2LL_LLL
050-7014
Rev
C
6-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100 200
0
10
20
30
40
50
0 20 40 60 80 100 120 140 160 180 200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC=+25°C
TJ=+150°C
SINGLE PULSE
400
100
50
10
1
16
14
12
10
8
6
4
2
0
20,000
10,000
5,000
1,000
500
100
220
100
50
10
5
1
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
10mS
100S
1mS
VDS=100V
VDS=40V
VDS=160V
TJ=+150°C
TJ=+25°C
I
D = 100A
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 133V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
E
on
and
E
off
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
100
90
80
70
60
50
40
30
20
10
0
2000
1500
1000
500
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
0
5
10 15 20 25 30
35 40 45 50
V
DD
= 133V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD = 133V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
V
DD = 133V
I
D = 100A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery
160
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
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| APT20M18B2VFRG | 功能描述:MOSFET N-CH 200V 100A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT20M18B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET |
| APT20M18B2VR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET |
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