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參數(shù)資料
| 型號： | APT20M13PVR |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 200 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, PPACK-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 53K |
| 代理商： | APT20M13PVR |
DYNAMIC CHARACTERISTICS
APT20M13PVR
050-5834
Rev
A
12-2003
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
MIN
TYP
MAX
120
480
1.3
460
7
Characteristic
Junction to Case
Junction to Ambient
UNIT
°C/W
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 0.6
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
MIN
TYP
MAX
18000
21600
4100
5740
1350
2025
690
1035
95
140
290
435
20
40
80
75
115
10
20
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
C
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.20
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 0.50mH, RG = 25, Peak IL = 120A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 Current limited by configuration constariants, not die.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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