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參數(shù)資料
| 型號： | APT20M13PVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | APT20M13PVR |
4
, Peak I
L
=146A
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
PRELMNARY
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
G
MIN
TYP
MAX
18000
4100
1350
630
95
290
20
40
75
10
UNIT
pF
nC
ns
APT20M13PVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
μ
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μ
C
MIN
TYP
MAX
146
584
1.5
460
7
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.20
40
UNIT
°
C/W
Characteristic
Junction to Case
Junction to Ambient
P-Pack Package Outline
29.34 (1.155)
35.81 (1.41)
51.05 (2.01)
(4-Places)
11.63 (.458)
12.45 (.490)
35.18 (1.385)
41.53 (1.635)
(4-Places)
5.33 (.210)
1.40 (.055)
9.27 (.365)
.635 (.025)
4.39 (.173)
Dimensions in Millimeters and (Inches)
28.70 (1.130)
(5 Places)
10.92 (.430)
D
G
S
S
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