參數(shù)資料
型號(hào): APT20M11JFLL
元件分類: JFETs
英文描述: 176 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 171K
代理商: APT20M11JFLL
050-7042
Rev
C
9-2004
APT20M11JFLL
Typical Performance Curves
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
7.5V
5.5V
6V
6.5
VGS =15 &10V
7V
8V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
50
100
150
200
250
300
350
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
350
300
250
200
150
100
50
0
180
160
140
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 88A
V
GS
= 10V
300
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
NORMALIZED TO
V
GS = 10V @ ID = 88A
0.0268
0.109
0.0426
0.0456F
0.765F
23.5F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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