參數(shù)資料
型號(hào)： APT20GT60CR
元件分類(lèi)： IGBT 晶體管
英文描述： 25 A, 600 V, N-CHANNEL IGBT, TO-254AA
封裝： TO-254, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 28K
代理商： APT20GT60CR
PRELIMINARY
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
APT20GT60CR
UNIT
°C/W
MIN
TYP
MAX
1.25
80
Characteristic
Junction to Case
Junction to Ambient
Symbol
RQJC
RQJA
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 10W
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
1100
110
65
95
40
8
10
34
115
125
15
190
30
0.55
0.45
1.0
15
18
160
25
0.60
4
UNIT
pF
nC
ns
mJ
ns
mJ
S
050-5970
Rev
-
6-2000
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = IC2, RGE = 25
W, L = 200H, T
j = 25°C
3
See MIL-STD-750 Method 3471
4
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料
PDF描述
APT20M11JVFR 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
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APT20M13PVR 120 A, 200 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M16B2LLG 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M16LLL 100 A, 200 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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