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參數(shù)資料
| 型號(hào)： | APT20GS60BRDQ1 |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 630K |
| 代理商： | APT20GS60BRDQ1 |
0.396
0.305
0.00169
0.0602
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Figure 20, Transient Thermal Impedance Model
I
C, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
F
MAX
,OPERATING
FREQUENCY
(kHz)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
Figure 18, Maximum Forward Safe Operating Area
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
10-5
10-4
10-3
10-2
10-1
1.0
1
10
100
800
1
10
100
800
0
5
10
15
20
25
30
35
40
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
100
10
1
0.1
100
10
1
0.1
250
200
150
100
50
0
TC = 100°C
TC = 75°C
Scaling for Different Case & Junction
Temperatures:
I
C = IC(TC = 25°C)
*(T
J - TC)/125
T
J = 150°C
T
C = 25°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
T
J = 125°C
T
C = 75°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.3
0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 9.1
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
10-5
10-4
10-3
10-2
10-1
1.0
APT20GS60B_SRDQ1(G)
052-6304
Rev
A
8-2007
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
| APT20GS60SRDQ1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60SRDQ1G | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
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