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參數(shù)資料
| 型號： | APT15GP90KG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 43 A, 900 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 389K |
| 代理商： | APT15GP90KG |
050-7469
Rev
D
2-2006
APT15GP90K(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 350A)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (V
CE = 900V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 900V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT15GP90K(G)
900
±30
43
21
60
60A @ 900V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
900
3
4.5
6
3.2
3.9
2.7
250
2500
±100
900V
APT15GP90K
APT15GP90KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
SSOA Rated
Low Gate Charge
Ultrafast Tail Current shutoff
POWER MOS 7 IGBT
G
C
E
TO-220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT15GP90K | 43 A, 900 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP90K | 43 A, 900 V, N-CHANNEL IGBT, TO-220AB |
| APT15GT120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT15GT120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT15GT120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GT120BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT120BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT15GT120BRDQ1G | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT120BRG | 功能描述:IGBT 1200V 36A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GT120SRG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
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