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參數(shù)資料
| 型號： | APT15GP60BSC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 216K |
| 代理商： | APT15GP60BSC |
050-7448
Rev
A
7-2004
APT15GP60BSC
I F
,(AV)
FORWARD
CURRENT
I F
,FORWARD
CURRENT
(A)
C
J,
JUNCTION
CAPACITANCE
I r,
REVERSE
CURRENT
(pF)
(
A)
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
TJ = -55°C
TJ =25°C
VR = 400V
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
200
160
120
80
40
0
600
500
400
300
200
100
0
1234567
8
0
200
400
600
800
25
50
75
100
125
150
175
.3
1
10
100
400
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
VF,ANODE-TO-CATHODEVOLTAGE(V)
VR, CATHODE-TO-ANODE VOLTAGE (V)
Figure 26. Forward Current vs. Forward Voltage
Figure 27. Reverse Current vs. Reverse Voltage
Case Temperature (°C)
VR, REVERSE VOLTAGE (V)
Figure 28. Current Derating
Figure 29. Junction Capacitance vs. Reverse Voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT15GP60B | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60S | 56 A, 600 V, N-CHANNEL IGBT |
| APT15GP60KG | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT15GP60K | 56 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GP60K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60KG | 功能描述:IGBT 600V 56A 250W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GP60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 IGBT |
| APT15GP90B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. |
| APT15GP90B_06 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs |
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