參數(shù)資料
型號(hào)： APT15GN120BDQ1
廠(chǎng)商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： IGBT 晶體管
英文描述： 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 226K
代理商： APT15GN120BDQ1
050-7598
Rev
B
10-2005
APT15GN120BDQ1(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 0.5mA)
Gate Threshold Voltage (V
CE = VGE, I C = 600A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT15GN120BDQ1(G)
1200
±30
45
22
45
45A @ 1200V
195
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefcient. Low gate charge simplies gate drive
design and minimizes losses.
1200V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
1200
5.0
5.8
6.5
1.4
1.7
2.1
2.0
200
TBD
120
N/A
1200V
APT15GN120BDQ1
APT15GN120BDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
TO-2
47
G
C
E
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT15GN120BDQ1G 功能描述:IGBT 1200V 45A 195W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT15GN120K 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT15GN120KG 功能描述:IGBT 1200V 45A 195W TO220 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT15GN120SDQ1 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:High Speed PT IGBT
APT15GN120SDQ1G 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:High Speed PT IGBT
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