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參數(shù)資料
| 型號： | APT13GP120K |
| 英文描述： | Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family |
| 中文描述： | 電壓：1200伏室顫/的Vce（on）：3.6V的身份證（續(xù)）：一三安培|超快IGBT的家庭 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | APT13GP120K |
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APT13GP120B
1200V
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for very
fast switching, making it ideal for high frequency, high voltage switch-mode
power supplies and tail current sensitive applications. In many cases, the
POWER MOS 7
IGBT provides a lower cost alternative to a Power MOSFET.
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
100 kHz operation @ 800V, 7A
50 kHz operation @ 800V, 12A
RBSOA Rated
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT13GP120B
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Symbol
MIN
TYP
MAX
1200
3
4.5
6
3.6
3.9
3.1
250
2500
±100
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
μA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
1200
±20
±30
43
21
84
84A @ 960V
290
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
TO-247
GCE
G
C
E
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