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參數(shù)資料
| 型號： | APT130N65JC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 130 A, 650 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 153K |
| 代理商： | APT130N65JC6 |
050-7213
Rev
A
3-201
1
Typical Performance Curves
APT130N65JC6
0. 6
0. 7
0. 8
0. 9
1
1. 1
1. 2
-80
-40
0
40
80
120
160
0.8
0.9
1.00
1.10
1.20
50
10
30
70
110
150
0.80
0.90
1.00
1.10
1.20
1.30
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
25
50
75
100
120
150
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 4, R
DS(ON) vs Drain Current
T
J, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.50
1.00
1.50
2.00
2.50
3.00
-80
-40
0
40
80
120
160
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 130A
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
0.1
1
10
100
1000
1
10
100
1000
100μs
10ms
1ms
15V
4.5V
5.5V
5V
6.0V
6.5V
7.0V
10V
R
DS(on)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
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