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參數(shù)資料
| 型號： | APT12GT60KR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 129K |
| 代理商： | APT12GT60KR |
052-6201
Re
v
F
11-2008
APT12GT60KR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,
THRESHOLD
V
O
LT
A
GE
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
(NORMALIZED)
I
C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
V
O
LT
A
GE
(V)
V
GE
,GA
TE-T
O-EMITTER
V
O
LT
A
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
30
25
20
15
10
5
0
30
25
20
15
10
5
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
6
8
10
12
14
16
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100 125 150
50
45
40
35
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
35
30
25
20
15
10
5
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
FIGURE 2, Output Characteristics (T
J
= 125°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
9V
8V
7V
10V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 20A
I
C
= 10A
I
C
= 5A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 20A
I
C
= 10A
I
C
= 5A
T
J = 125°C
T
J = 25°C
T
J = -55°C
13V
11V
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 10A
T
J
= 25°C
V
GE
= 15V
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