參數(shù)資料
型號： APT12057JFLL
元件分類： JFETs
英文描述： 19 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 5/5頁
文件大?。?/td> 170K
代理商： APT12057JFLL
050-7085
Rev
C
7-2004
APT12057JFLL
Typical Performance Curves
Drain Current
DrainVoltage
GateVoltage
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT30DF120
Switching Energy
Drain Current
DrainVoltage
GateVoltage
10%
0
t
d(off)
t
f
90%
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
T
J125°C
T
J125°C
相關(guān)PDF資料
PDF描述
APT12057JLL 19 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12057LLL 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT12057B2LL 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12060B2VFRG 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12060B2VFR 20 A, 1200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT12057JLL 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 19A SOT227
APT12057LFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT12057LFLLG 功能描述:MOSFET N-CH 1200V 22A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT12057LLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT12060B2VFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V
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