- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36705 > APT12057B2FLL 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT12057B2FLL |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 169K |
| 代理商： | APT12057B2FLL |
050-7083
Rev
C
7-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
G
D
S
TO-264
B2FLL
LFLL
APT12057B2FLL
APT12057LFLL
1200V 22A 0.570
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FAST RECOVERY BODY DIODE
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, 11A)
Zero Gate Voltage Drain Current (V
DS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
0.570
250
1000
±100
35
APT12057B2FLL_LFLL
1200
22
88
±30
±40
690
5.52
-55 to 150
300
22
50
3000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT12057B2FLL | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12057LFLL | 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12057JFLL | 19 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12057JFLL | 19 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12057JLL | 19 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12057B2FLLG | 功能描述:MOSFET N-CH 1200V 22A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12057B2LL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT12057B2LLG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1.2KV 22A 3-Pin(3+Tab) T-MAX 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 22A T-MAX |
| APT12057JFLL | 功能描述:MOSFET N-CH 1200V 19A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT12057JLL | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 1200V 19A SOT227 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。