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參數(shù)資料
| 型號： | APT1204R7SLL |
| 英文描述： | Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
| 中文描述： | 電壓：1200伏的RDS（ON）：4.7Ohms編號（續(xù)：）3安培| MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | APT1204R7SLL |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
1200
3.5
4.70
100
500
±100
5
3
APT1204R7
1200
3.5
14
±30
±40
135
1.08
-55 to 150
300
3.5
10
425
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D
3
PAK
BLL
SLL
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
. Power MOS 7
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
is a new generation of low loss, high voltage, N-Channel
by significantly lowering R
combines lower conduction and switching losses
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg
Increased Power Dissipation
Easier To Drive
TO-247 or Surface Mount D
3
PAK Package
APT1204R7BLL
APT1204R7SLL
1200V 3.5A 4.700
POWER MOS 7
R
MOSFET
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