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參數(shù)資料
| 型號： | APT1204R7BFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | APT1204R7BFLLG |
DYNAMIC CHARACTERISTICS
APT1204R7BFLL_SFLL
050-7390
Rev
A
3-2004
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.9
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 3.5A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 3.5A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID 3.5A, di/dt = 100A/s)
Peak Recovery Current
(IS = -ID 3.5A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
3.5
14
1.3
18
Tj = 25°C
250
Tj = 125°C
515
Tj = 25°C
.5
Tj = 125°C
1.1
Tj = 25°C
8.3
Tj = 125°C
11.5
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.90
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 69.39mH, RG = 25, Peak IL = 3.5A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID3.5A
di/dt ≤ 700A/s V
R ≤ 1200
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 600V
I
D = 3.5A @ 25°C
V
GS = 15V
V
DD = 600V
I
D = 3.5A @ 25°C
R
G = 1.6
MIN
TYP
MAX
716
900
132
200
36
60
31
50
45
21
40
714
24
20
30
24
50
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1204R7SFLLG | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1204R7BLL | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1204R7SLL | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1204R7KFLL | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT1204R7KFLLG | 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1204R7BLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
| APT1204R7KFLL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 FREDFET |
| APT1204R7KFLLG | 功能描述:MOSFET N-CH 1200V 3.5A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT1204R7KLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs |
| APT1204R7SFLL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 FREDFET |
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