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參數(shù)資料
| 型號(hào)： | APT12040JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 24 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | APT12040JFLL |
050-7125
Rev
B
12-2003
APT12040JFLL
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1200
0
10
20
30
40
50
0
50
100
150
200
250
300
350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
96
50
10
5
1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100S
TJ =+150°C
TJ=+25°C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
4550
0
5
1015
20
25
30
35 4045
50
V
DD
= 800V
I
D
= 30A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
VDS=600V
VDS=240V
VDS=960V
I
D
= 30A
td(on)
td(off)
Eon
Eoff
300
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 800V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
30,000
10,000
1000
100
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
90
80
70
60
50
40
30
20
10
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
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PDF描述 |
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| APT12040JVFR | 26 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT12040L2FLL | 30 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12040L2FLL | 30 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT12040L2FLLG | 30 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12040JLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT12040JVFR | 功能描述:MOSFET N-CH 1200V 26A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT12040JVR | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT12040L2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT12040L2FLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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