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參數(shù)資料
| 型號： | APT1201R6SVR |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 117K |
| 代理商： | APT1201R6SVR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 1.6
MIN
TYP
MAX
3050
3660
255
360
125
190
155
230
15
23
78
115
12
24
10
20
50
75
15
30
UNIT
pF
nC
ns
APT1201R6BVR/SVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5573
Rev
B
12-2002
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (I
S = -ID[Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID[Cont.], dlS/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
8
32
1.3
500
7
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 37.81mH, RG = 25, Peak IL = 8A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.45
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1201R6BVR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1201R6SVFRG | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1201R6BVFRG | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1201R6SVFR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1201R6SVFR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
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