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參數(shù)資料
| 型號： | APT1201R6SVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 118K |
| 代理商： | APT1201R6SVFR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT1201R6BVFR_SVFR
050-5849
Rev
A
6-2004
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline (BVFR)
D
3PAK Package Outline (SVFR)
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
2.40 (.094)
2.70 (.106)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
1
5
10
50 100
500 1200
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
50
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D = ID [Cont.]
15,000
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=600V
10S
100S
1mS
10mS
100mS
DC
VDS=240V
VDS=120V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1201R6SVFR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1201R6BVFR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1201R6BVFR | 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT12031JLL | 30 A, 1200 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT12040JFLL | 24 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1201R6SVFRG | 功能描述:MOSFET N-CH 1200V 8A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12031JFLL | 功能描述:MOSFET N-CH 1200V 30A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT12031JLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT12040JFLL | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT12040JLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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