參數(shù)資料
型號(hào)： APT1201R5BVR
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 63K
代理商： APT1201R5BVR
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500 1200
.01
.1
1
10
50
0
50
100
150
200
250
300
350
0.2
0.4
0.6
0.8
1.0
1.2
1.4
APT1201R5BVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
50
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
15,000
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
050-5563
Rev
A
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=600V
10
S
100
S
1mS
10mS
100mS
DC
VDS=240V
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
TO-247 Package Outline
VDS=120V
相關(guān)PDF資料
PDF描述
APT1201R6BVR 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1201R6SVR 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1201R6BVR 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1201R6SVFRG 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1201R6BVFRG 8 A, 1200 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1201R5BVRG 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:POWER MOSFET TRANSISTOR
APT1201R5SVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V
APT1201R5SVFRG 功能描述:MOSFET N-CH 1200V 10A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT1201R6 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT1201R6BVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET
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