參數(shù)資料
型號： APT1201R4BFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247, 3 PIN
文件頁數(shù)： 3/5頁
文件大?。?/td> 413K
代理商： APT1201R4BFLL
050-7392
Rev
C
2-200
9
Typical Performance Curves
APT1201R4B_SFLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
2
4
6
8
10
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
25
50
40
30
20
0
9
8
7
6
5
4
3
2
1
0
2.5
2.0
1.5
1.0
0.5
0.0
20
18
16
14
12
10
08
06
04
02
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
5.5V
6V
6.5V
7V
5V
VGS =15,10 & 8V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @ 4.5A
I
D = 4.5A
V
GS = 10V
0.164
0.257
0.0022
0.060
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
相關(guān)PDF資料
PDF描述
APT1201R4BFLLG 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1201R4SFLL 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1201R4BFLL 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1201R5BVFR 10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1201R5SVFR 10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1201R4BFLLG 功能描述:MOSFET N-CH 1200V 9A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT1201R4BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT1201R4SFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT1201R4SFLLG 功能描述:MOSFET N-CH 1200V 9A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT1201R4SLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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