參數(shù)資料
型號(hào): APT1201R2BFLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 318K
代理商: APT1201R2BFLLG
DYNAMIC CHARACTERISTICS
APT1201R2BFLL_SFLL
050-7393
Rev
C
2-200
9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -12A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -12A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -12A, di/dt = 100A/s)
Peak Recovery Current
(IS = -12A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
12
48
1.3
18
Tj = 25°C
210
Tj = 125°C
710
Tj = 25°C
1.0
Tj = 125°C
3.6
Tj = 25°C
10
Tj = 125°C
14
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 18.06mH, RG = 25, Peak IL = 12A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ID-12A
di/dt ≤ 700A/s V
R ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN
TYP
MAX
2540
365
70
100
14
65
8
18
29
21
465
100
935
135
UNIT
pF
nC
ns
J
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 600V
I
D = 12A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 600V
I
D = 12A @ 25°C
R
G = 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 800V, VGS = 15V
I
D = 12A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 800V, VGS = 15V
I
D = 12A, RG = 5
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1201R2BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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APT1201R2SLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT1201R4BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET