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參數(shù)資料
| 型號： | APT11GP60K |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 170K |
| 代理商： | APT11GP60K |
050-7419
Rev
B
6-2004
APT11GP60K_SA
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
APT15DS30
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220AC Package Outline (K)
TO-263 (D2) Surface mount Package Outline (SA)
10.06 (.396)
10.31(.406)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.330 (.013)
0.432 (.017)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
Collector (Heat
Sink)
Gate
Collector
Emitter
0.000 (.000)
0.254 (.010)
6.02 (.237)
6.17 (.243)
1.40 (.055)
1.65 (.065)
7.54 (.297)
7.68 (.303)
8.51 (.335)
8.76(.345)
0.762 (.030)
0.864 (.034)
{2 Plcs.}
0.050 (.002)
2.62 (.103)
2.72 (.107)
3.68 (.145)
6.27 (.247)
(Base of Lead)
APT15DF60
T
J = 125°C
Drain Current
DrainVoltage
GateVoltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J = 125°C
DrainVoltage
Drain Current
GateVoltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
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| APT11N80BC3G | 功能描述:MOSFET N-CH 800V 11A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT11N80KC3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
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