參數(shù)資料
型號(hào)： APT11058LFLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： JFETs
英文描述： 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264(L), 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 166K
代理商： APT11058LFLL
050-7181
Rev
A
4-2004
DYNAMIC CHARACTERISTICS
APT11058B2FLL_LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -20A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -20A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -20A, di/dt = 100A/s)
Peak Recovery Current
(IS = -20A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
20
80
1.3
18
Tj = 25°C
340
Tj = 125°C
640
Tj = 25°C
1.78
Tj = 125°C
4.47
Tj = 25°C
11.4
Tj = 125°C
16.4
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 12.50mH, RG = 25, Peak IL = 20A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID20A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 550V
I
D = 20A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 550V
I
D = 20A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 733V, VGS = 15V
I
D = 20A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 733V VGS = 15V
I
D = 20A, RG = 5
MIN
TYP
MAX
4135
680
120
160
20
105
16
8
40
12
700
210
1450
270
UNIT
pF
nC
ns
J
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
相關(guān)PDF資料
PDF描述
APT11058B2FLL 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
APT11GF120KR 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB
APT11GF120KRG 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB
APT11GF120KR 25 A, 1200 V, N-CHANNEL IGBT, TO-220AB
APT11GP60SA 41 A, 600 V, N-CHANNEL IGBT, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT11F80B 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT11F80S 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK
APT11GF120BRD 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family
APT11GF120BRDQ1 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:FAST IGBT & FRED
APT11GF120BRDQ1G 功能描述:IGBT 1200V 25A 156W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*