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參數(shù)資料
| 型號： | APT11058B2FLL |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 1100 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | B2, TMAX-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 166K |
| 代理商： | APT11058B2FLL |
050-7181
Rev
A
4-2004
Typical Performance Curves
APT11058B2FLL_LFLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
5.5V
6V
6.5V
5V
VGS =15,10 & 7.5V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
7V
0
5
10
15
20
25
30
0
12345678
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
3
2.5
2.0
1.5
1.0
0.5
0
I
D = 10A
V
GS = 10V
NORMALIZED TO
V
GS = 10V @ 10A
45
40
35
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0893
0.0842
0.0485
0.0102F
0.106F
0.980F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT11058JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT11F80S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK |
| APT11GF120BRD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family |
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