- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36704 > APT11044LFLL (MICROSEMI POWER PRODUCTS GROUP) 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF資料下載
參數(shù)資料
| 型號： | APT11044LFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 101K |
| 代理商： | APT11044LFLL |
050-7177
Rev
A
11-2003
APT11044B2FLL - LFLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Drain Current
Drain Voltage
Gate Voltage
T
J
= 125 C
90%
t
d(off)
10%
0
t
f
90%
Switching Energy
T
J
= 125 C
Gate Voltage
Drain Current
Drain Voltage
10 %
t
d(on)
90%
t
r
5 %
10 %
5 %
Switching Energy
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
IC
D.U.T.
APT30DF120
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT11044B2FLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT110GL100JN | 110 A, 1000 V, N-CHANNEL IGBT |
| APT40GF100BN | 40 A, 1000 V, N-CHANNEL IGBT, TO-247 |
| APT45GF60BN | 45 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT75GL60BN | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT11058B2FLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11058JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT11F80S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。