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| 型號(hào)： | APT1101RBFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 105K |
| 代理商： | APT1101RBFLLG |
DYNAMIC CHARACTERISTICS
050-7187
Rev
A
11-2003
APT1101RBFLL_SFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -13A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -13A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -13A, di/dt = 100A/s)
Peak Recovery Current
(IS = -13A, di/dt = 100A/s)
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
13
52
1.3
18
Tj = 25°C
210
Tj = 125°C
710
Tj = 25°C
1.0
Tj = 125°C
3.6
Tj = 25°C
10
Tj = 125°C
14
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.31
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 15.38mH, RG = 25, Peak IL = 13A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-13A di/dt ≤ 700A/s V
R ≤
1100 T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
MIN
TYP
MAX
2345
388
65
90
12
61
12
7
32
14
364
105
748
139
UNIT
pF
nC
ns
J
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 550V
I
D
= 13A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 550V
I
D
= 13A @ 25°C
R
G
= 1.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 733V, V
GS
= 15V
I
D
= 13A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 733V, V
GS
= 15V
I
D
= 13A, R
G
= 5
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
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