參數(shù)資料
型號: APT1101R2SFLL
元件分類: JFETs
英文描述: 10 A, 1100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 5/5頁
文件大?。?/td> 105K
代理商: APT1101R2SFLL
050-7185
Rev
A
2-2004
Typical Performance Curves
APT1101R2BFLL_SFLL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3
PAK Package Outline
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
10%
90%
10%
t
r
5%
t
d(on)
Switching Energy
5%
90%
10%
t
f
0
t
d(off)
T
J
= 125°C
Switching Energy
T
J
= 125°C
DrainVoltage
Drain Current
GateVoltage
Drain Current
DrainVoltage
GateVoltage
相關(guān)PDF資料
PDF描述
APT1101RBFLLG 13 A, 1100 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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