參數(shù)資料
型號(hào)： APT10M30AVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 66K
代理商： APT10M30AVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
APT10M30AVR
0
0
10
20
30
40
50
0
1
2
3
4
5
0
2
4
6
8
10
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
150
125
100
75
50
25
0
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
150
125
100
75
50
25
0
150
125
100
75
50
25
0
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V & 15V
6V
TJ = +25
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
7V
5.5V
4.5V
4V
5V
VGS=20V
VGS=10V
VGS=15V
10V
6.5V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
6V
7V
5.5V
4.5V
4V
5V
6.5V
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