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參數(shù)資料
| 型號： | APT10M25SVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | APT10M25SVR |
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= 0.5 I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 1.6
MIN
TYP
MAX
4300
5160
1600
2240
650
975
150
225
28
42
75
115
13
26
22
44
40
60
10
20
UNIT
pF
nC
ns
APT10M25SVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-5518
Rev
A
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
75
300
1.3
150
1.0
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
1 Repetitive Rating: Pulse width limited by maximum Tj
4 Starting Tj = +25°C, L = 0.53mH, RG = 25, Peak IL = 75A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1 5 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
s)
5
Z
θ
JC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10M30AVR | 65 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| APT10M30BNFR-BUTT | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M30BNFR-GULLWING | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M25BNFR-GULLWING | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M25BNFR-BUTT | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M25SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT10M30AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M30BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M30BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 36A TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Switching 1.2KV 37A |
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