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參數(shù)資料
| 型號： | APT10M25SVR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | APT10M25SVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50
100
.01
.1
1
10
50
0
50
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
APT10M25SVR
050-5518
Rev
A
TC =+25°C
TJ =+150°C
SINGLE PULSE
400
100
50
10
5
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
Ciss
100
S
10mS
100mS
DC
1mS
TJ =+150°C
TJ =+25°C
Coss
Ciss
VDS=50V
VDS=20V
VDS=80V
I
D
= I
D
[Cont.]
15,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3PAK Package Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10M25SVR | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M30AVR | 65 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| APT10M30BNFR-BUTT | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M30BNFR-GULLWING | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M25BNFR-GULLWING | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M25SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT10M30AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M30BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M30BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 36A TO247 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Switching 1.2KV 37A |
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