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參數(shù)資料
| 型號(hào)： | APT10M25BVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | APT10M25BVFR |
DYNAMIC CHARACTERISTICS
APT10M25BVFR
050-5605
Rev
B
1 Repetitive Rating: Pulse width limited by maximum Tj
4 Starting Tj = +25°C, L = 0.53mH, RG = 25, Peak IL = 75A
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
5 The maximum current is limited by lead temperature.
3 See MIL-STD-750 Method 3471
6 IS ≤ -ID [Cont.], di/dt = 100A/s, VR = 50V, Tj ≤ 150°C, RG = 2.0
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1 5 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.6
MIN
TYP
MAX
4300
5160
1600
2240
650
975
150
225
28
42
75
115
13
26
22
44
40
60
10
20
UNIT
pF
nC
ns
MIN
TYP
MAX
75
300
1.3
5
Tj = 25°C
200
Tj = 125°C
300
Tj = 25°C
0.5
Tj = 125°C
1.1
Tj = 25°C
10
Tj = 125°C
14
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
5
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| APT10M25BVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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| APT10M25SNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB |
| APT10M25SVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
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