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參數(shù)資料
| 型號： | APT10M20BLL |
| 元件分類： | JFETs |
| 英文描述： | 92 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | APT10M20BLL |
DYNAMIC CHARACTERISTICS
APT10M20 BLL - SLL
050-7140
Rev
-
12-2001
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 0.31mH, RG = 25W, Peak IL = 92A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 The maximum current is limited by lead temperature
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 0.6
W
MIN
TYP
MAX
3140
1635
93
55
23
20
10
12
25
8
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
92
368
1.3
150
1.0
5
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M25 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M25BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M25BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M25BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M25BVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
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