參數(shù)資料
型號： APT10M19SVFR
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁數(shù)： 2/4頁
文件大小： 120K
代理商： APT10M19SVFR
050-5606
Rev
B
6-2004
DYNAMIC CHARACTERISTICS
APT10M19BVFR_SVFR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -75A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -75A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -75A, di/dt = 100A/s)
Peak Recovery Current
(IS = -75A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
75
300
1.3
5
Tj = 25°C
200
Tj = 125°C
350
Tj = 25°C
0.5
Tj = 125°C
1.0
Tj = 25°C
8
Tj = 125°C
12
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.34
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.53mH, RG = 25, Peak IL = 75A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID75A
di/dt ≤ 700A/s V
R ≤100V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 50V
I
D = 75A @ 25°C
V
GS = 15V
V
DD = 50V
I
D = 75A @ 25°C
R
G = 1.6
MIN
TYP
MAX
5100
6120
1900
2660
800
1200
200
300
40
60
92
140
16
32
40
80
50
75
20
40
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.4
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關PDF資料
PDF描述
APT10M19SVFR 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10M19BVFR 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT10M19BVR 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT10M19BVR 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT10M19SVR 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
APT10M19SVFRG 功能描述:MOSFET N-CH 100V 75A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT10M19SVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M19SVRG 功能描述:MOSFET N-CH 100V 75A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT10M25 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT10M25BNFR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD
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